METHOD FOR FORMING VERNIER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a vernier of a semiconductor device is provided to be capable of preventing the generation of a mis-detected signal due to scattered reflection by forming a plurality of verniers. CONSTITUTION: A metal layer(23) is formed at the upper portion of a semiconductor substrate(21), wherein the semiconductor substrate is completed with predetermined processes. A pair of son verniers(30) are formed on the upper portion of the metal layer(23) for checking the alignment state of the metal layer(23). At this time, the son verniers(30) are formed corresponding to a pair of mother verniers(20), respectively. Preferably, the alignment state is checked by using useful detecting points excluding the other detecting points existing at mis-detection region out of a plurality of detecting points according to the son verniers(30) formed on the metal layer(23).