| 摘要 |
PURPOSE: A flash ROM cell and a fabricating method thereof are provided to reduce an occupied area by forming polysilicon lines in a narrow interval and enhance an operating speed by reducing the resistance of an N+ layer. CONSTITUTION: A photoresist mask pattern is formed on a semiconductor substrate(20) in order to define a position for forming a virtual ground. The semiconductor substrate(20) is etched by using the photoresist mask pattern as an etch mask. A trench is formed by etching the semiconductor substrate(20). The photoresist mask pattern is removed. A doped polysilicon layer is deposited thereon. A polysilicon line(24) is formed by etching back the doped polysilicon layer. A flash cell is fabricated by forming sequentially a gate insulating layer(25), a floating gate(26), an insulating layer(27), and a control gate(28).
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