发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve a threshold voltage, short channel effect and ESD(ElectroStatic Discharge) by forming an air-tunnel at lower part of a channel. CONSTITUTION: An SiGe film and the first polysilicon layer(15) are sequentially formed on a substrate(11). A contact hole is formed by selectively etching the first polysilicon layer. An air-tunnel(17) is formed by wet-etching of the exposed SiGe film. The second polysilicon layer(19) is filled into the contact hole. A gate insulating pattern(21), a gate electrode(23) and a mask insulating pattern(25) are sequentially stacked on the resultant structure. After forming an LDD(Lightly Doped Drain) region(27), an insulating spacer(29) is formed at both sidewalls of the stacked structure. Then, a source/drain region(31) is formed in the substrate.
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申请公布号 |
KR100353468(B1) |
申请公布日期 |
2002.09.09 |
申请号 |
KR20000081746 |
申请日期 |
2000.12.26 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
YANG, KUK SEUNG;YUN, HEE YONG |
分类号 |
H01L21/336;H01L21/762;H01L21/764;H01L29/06;H01L29/10;H01L29/786;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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