| 摘要 |
PROBLEM TO BE SOLVED: To provide a charging method for single crystal raw material where an additional charge of a semiconductor single crystal rod is performed in a short time, without contaminating a device, without causing breakage of a seed crystal, and without generating dislocation of a crystal, using a Czochralski(CZ) method. SOLUTION: A manufacturing method for a semiconductor single crystal is executed as follows: a single crystal rod is held by a single crystal holding device 2 arranged at a seed crystal holding device 5 where a seed crystal 1 is set, the single crystal rod is brought into contact with raw material molten liquid and melted, thereafter, a seed crystal is continuously brought into contact with the raw material melt without exposing the seed crystal holding device to the atmosphere and thus a single crystal is pulled.
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