| 摘要 |
PROBLEM TO BE SOLVED: To provide a wafer with the defects of an epitaxial film being very few, in an epitaxial wafer using a sub wafer containing B in high concentration, and its manufacturing method. SOLUTION: In this epitaxial silicon wafer, an epitaxial film is made on the sub wafer constituted of silicon single crystals, where boron concentration is 4×10<18> to 2×10<19> atoms/cm<3> and the concentration of tin is 1×10<18> to 2×10<19> atoms/cm<3> . In the manufacturing method for the wafer, the sub wafer is picked from the single crystal being fostered on condition that V/G exceeds 1.34×10<-3> cm<2> /(min.K), if the fostering speed is defined V (cm/min) and the temperature gradient in the direction of pulling-up axis is G (K/cm), and this is made to form the epitaxial film.
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