发明名称 RIBBON EMBEDDED SEMICONDUCTOR LASER AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a BRS laser and a method for manufacturing the BRS laser, in which, an active layer is protected from diffusion of P-type impurities which come from not only a wall face on both sides of a ribbon, namely upper and bottom wall faces of the ribbon, but also a sideward wall face connected to the upper and bottom wall faces. SOLUTION: The P-type impurities which are directly adjacent to an active layer are doped on a layer in order to manufacture an embedding ribbon laser, and a layer obtained by doping thin N-type impurities is formed on the above layer. After the active layer is etched for forming a ribbon, the ribbon is embedded in the layer in which the N-type impurities were doped so that all four sideward faces of the ribbon come into contact with the layer in which the N-type impurities were doped. One face comes into contact with a thin layer, and the other three faces come into contact with the embedded layer. This improves electric confinement.
申请公布号 JP2002252406(A) 申请公布日期 2002.09.06
申请号 JP20020027710 申请日期 2002.02.05
申请人 ALCATEL 发明人 BOUADMA NOUREDDINE
分类号 H01S5/02;H01S5/223;H01S5/227;(IPC1-7):H01S5/02 主分类号 H01S5/02
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