METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR SINGLE CRYSTAL AND UTILIZATION THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a method where a nitride semiconductor single crystal having a small dislocation density can be manufactured by a simple and easy way. SOLUTION: In the method for manufacturing a compound semiconductor single crystal, a compound semiconductor single crystal represented by a general formula, InxCayAlzN (wherein, x+y+z=1; 0<=x<=1; 0<=y<=1; 0<=z<=1), is selectively grown on a semiconductor silicon substrate equipped with a mask having a through-hole with a circle conversion diameter of <=1 μm.