| 摘要 |
PROBLEM TO BE SOLVED: To provide a chemical amplification type positive photoresist composition having superior sensitivity and resolution, capable of giving a good section shape of a resist pattern and less susceptible to a light proximity effect, that is, ensuring a small size difference between an isolated resist pattern and a dense resist pattern. SOLUTION: The chemical amplification type positive photoresist composition is obtained by adding (D) a bisazido compound to an organic solvent containing (A) a base resin component comprising at least one hydroxystyrene copolymer having acid dissociable groups substituted for the hydrogen atoms of at least part of phenolic hydroxyl groups or carboxyl groups present in the copolymer, (B) a compound which generates an acid when irradiated with radiation and (C) an organic amine. |
