| 摘要 |
PROBLEM TO BE SOLVED: To obtain a voltage level converter in which through current is sufficiently suppressed. SOLUTION: In a voltage level converter which is constituted of MISTFTs which use poly crystalline silicon as semiconductor layers on an insulated substrate, the input terminal of input pulses is connected respectively to gates of an NMISTFT1 and a PMISTFT1 and a first terminal and the gate of a PMISTFT3 via a capacitor 1 and the input terminal of the input pulses is connected respectively to gates of an NMISTFT2 and a PMISTFT2, a second terminal and the gate of an NMISTFT3 via a capacitor 2 and, moreover, second terminals of the NMISTFT1 and the PMISTFT1 and the first terminal of the PMISTFT3 are connected respective to a high voltage supply side and first terminals of the NMISTFT2 and the PMISTFT2 and the second terminal of the NMISTFT3 are connected respectively to a low voltage supply side and the connection point of the second terminal of the PMISTFT3 and the first terminal of the NMISTFT3 are made to be an output terminal.
|
