| 摘要 |
PURPOSE: A burn-in test drive circuit using external supply voltage is provided to perform a burn-in test of a semiconductor memory device regardless of residual input ports or particular operation timing. CONSTITUTION: A burn-in test circuit(100) is formed with a current source portion(101) and a current supply portion(103). The current source portion(101) has a plurality of NMOS transistors(101a) formed between a burn-in mode signal(PBURN) and a ground voltage(VSS). The current supply portion(103) supplies the current by using a diode formed between the burn-in mode signal(PBURN) and the external supply voltage(Vext). A voltage level difference between a voltage level of the burn-in mode signal(PBURN) and the external supply voltage(Vext) is constant. The voltage level difference between the burn-in mode signal(PBURN) and the external supply voltage(Vext) is determined by the number of diodes of the current supply portion(103).
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