发明名称 |
Method for forming a bitline contact via within a memory cell structure |
摘要 |
Within a method for forming a contact via there is provided a substrate having formed thereover a pair of topographic structures separated by a contact region formed within the substrate. There is then formed upon the substrate and the pair of topographic structures a blanket conformal isolation layer which has formed thereupon a blanket variable thickness masking layer formed thicker over the pair of topographic structures than interposed between the pair of topographic structures. The blanket variable thickness masking layer and the blanket conformal isolation layer are then completely etched through interposed between, but not over, the pair of topographic structures to thus form the contact via. The method is useful for forming bitline contact vias within memory cell structures.
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申请公布号 |
US6444575(B1) |
申请公布日期 |
2002.09.03 |
申请号 |
US20010918084 |
申请日期 |
2001.07.30 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD |
发明人 |
YU CHIH-HSING;TU YEUR-LUEN |
分类号 |
H01L21/02;H01L21/60;H01L21/8242;H01L27/108;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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