发明名称
摘要 <p>PROBLEM TO BE SOLVED: To provide a method for making element into chip, which can satisfactorily cut/separate multiple elements formed on one wafer having a diamond layer, while maintaining the capabilities. SOLUTION: In a method for making a diamond wafer into a chip, a diamond wafer 5 having a diamond layer 2 which is vapor phase-composited on a Si substrate 1 and a plurality of elements 31 and 32 formed on the layer is cut and is made into chips at every substrate and every element. The chip making method comprises a half-cut process for forming a groove which is shallower than the thickness of the substrate but deeper than half the thickness of the substrate between the elements 31 and 32 of the substrate 1 from a face opposite to an element forming face and a full-cut process for cutting the elements 31 and 32 by each element, by irradiating the base 4 of the groove with a laser beam and removing the remaining substrate 1 and the diamond layer 2 with a width smaller than that of the groove part.</p>
申请公布号 JP3319507(B2) 申请公布日期 2002.09.03
申请号 JP19980182713 申请日期 1998.06.29
申请人 发明人
分类号 H01L21/301;(IPC1-7):H01L21/301 主分类号 H01L21/301
代理机构 代理人
主权项
地址