发明名称 |
Thermal processing unit and thermal processing method |
摘要 |
A thermal processing unit of the invention includes a substrate-holder which can support a plurality of substrates in such a manner that the plurality of substrates are arranged at a predetermined pitch, and a chamber vessel for housing the substrate-holder. The inside of the chamber vessel may be made a vacuum. A gas-introducing slit having a small conductance is provided in one part of a peripheral area of the plurality of substrates held by the substrate-holder. The gas-introducing slit extends in a direction in which the plurality of substrates are arranged and supplies a processing gas for a thermal process into the chamber vessel. A gas-absorbing opening having a large conductance is provided in another part of the peripheral area of the plurality of substrates held by the substrate-holder. The gas-absorbing opening extends in the direction in which the plurality of substrates are arranged. The substrate-holder may be loaded into and unloaded out of the chamber vessel by a loading mechanism.
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申请公布号 |
US6444262(B1) |
申请公布日期 |
2002.09.03 |
申请号 |
US20000548603 |
申请日期 |
2000.04.13 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
KITAMURA MASAYUKI;SHIOTANI TOMOHIRO;TAFUSA ISAO |
分类号 |
H01L21/22;C23C16/44;C23C16/455;C23C16/458;C30B25/12;C30B25/14;F27B5/06;F27D3/12;H01L21/00;H01L21/205;H01L21/324;H01L21/673;(IPC1-7):C23C16/00 |
主分类号 |
H01L21/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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