发明名称 |
Junction formation with diffusion barrier for silicide contacts and method for forming |
摘要 |
Method and apparatus are provided for a semiconductor device including a junction and contact having a diffusion barrier to control silicidation of a silicon substrate. A dopant is applied in excess of an amount required to form a junction and the dopant chemically reacts with a metal to form a compound which serves as a barrier layer to prevent silidication in the substrate.
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申请公布号 |
US6444553(B1) |
申请公布日期 |
2002.09.03 |
申请号 |
US19970110377 |
申请日期 |
1997.09.15 |
申请人 |
UNIVERSITY OF HOUSTON |
发明人 |
ZAGOZDSON-WOSIK WANDA;LI JIA |
分类号 |
H01L21/225;H01L21/285;(IPC1-7):H01L21/28;H01L21/44 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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