| 摘要 |
PROBLEM TO BE SOLVED: To provide the formation method of a very shallow junction, with which a required area is annealed efficiently in a short time, by using an excimer laser capable of annealing in the shallow region of a substrate, since the wavelength is short and a light absorption coefficient is large. SOLUTION: Impurity ions are implanted to the depth of <=40 nm in impurity implantation regions (4 and 5) on a semiconductor substrate (1) by an ion implantation method and the temperature of the semiconductor substrate (1) is elevated to a low temperature of 550 to 600 deg.C, at which impurities do not diffuse. Also, the impurity implantation regions (4 and 5) of the semiconductor substrate (1) at the temperature are irradiated by the excimer laser, having a wavelength of <=310 nm, and the re-crystallization of the implantation regions (4 and 5) and the electrical activation of the impurities are carried out.
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