| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film dry-etching method, whereby a wiring pattern having a desired tapered angle can be formed with high dimensional accuracy. SOLUTION: In a processing chamber, patterning of a processed film is performed, by etching the uncovered region of the processed film with an etching mask. The patterning process includes a first etching process for etching the processed film in a first etching condition and a second etching process for etching further the processed film in a second etching condition different from the first etching condition. In the first etching process, after measuring the intensities of a light component, having a selected wavelength among the wavelengths of the lights emitted from activated species present in the processing chamber, the averaged value of the intensities of the light component in a fixed time zone before the underlay of the processed film begins to be exposed to the external is determined so as to stop the etching, when the intensity of the light component is changed into a magnitude having a relative prescribed rate to the average value. In the second etching process, after measuring the intensities of the light component having the selected wavelength among the wavelengths of the lights emitted from the activated species present in the processing chamber, the etching is stopped, based on a change of the intensity of the light component.
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