| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device for prolonged a wiring life time by suppressing temperature rise of copper wiring and improving manufacturing stability. SOLUTION: A silicon nitride film 18 is formed, after plasma processing surface of a copper wiring 17 with a raw gas, including nitrogen element to form copper nitride layer 24. At that time, a thin copper silicide layer 25 is formed in the blower part of a copper nitride layer 24.
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| 申请公布号 |
JP2002246391(A) |
申请公布日期 |
2002.08.30 |
| 申请号 |
JP20010044949 |
申请日期 |
2001.02.21 |
| 申请人 |
NEC CORP |
发明人 |
AOKI HIDEMITSU;TOMIMORI HIROAKI;OKADA NORIO;USAMI TATSUYA;OOTO KOICHI;TANIKUNI TAKAMICHI |
| 分类号 |
C23C8/48;H01L21/02;H01L21/304;H01L21/308;H01L21/314;H01L21/316;H01L21/318;H01L21/3205;H01L21/321;H01L21/768;H01L23/52;(IPC1-7):H01L21/320 |
主分类号 |
C23C8/48 |
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