发明名称 METHOD AND EQUIPMENT FOR POLISHING AND CLEANING SILICON WAFER
摘要 PROBLEM TO BE SOLVED: To provide a method and equipment for polishing and cleaning a silicon wafer, wherein quality and productivity of a silicon wafer is improved by contributing to the reduction in load, treatment time and quantity of chemical liquid in a cleaning process. SOLUTION: A polishing and cleaning method and equipment for mechano- chemical polishing of a silicon wafer consist of a polishing means 10 where polishing is performed, while polishing water containing abrasive is supplied to a surface of a silicon wafer, a preceding cleaning means for eliminating contaminant, such as polishing slurry from the silicon wafer with the polishing means 10 being finished, a transfer means 30 for quickly transferring the silicon wafer with the precedent cleaning means being finished to a cleaning means 40, while the silicon wafer is dipped in the polishing water properly for preventing the silicon wafer from drying, and the cleaning means 40 with impurities and fine particles on the surface of the silicon wafer transferred by the transfer means 30 being removed and the degree of cleaning of the surface of the silicon wafer is increased.
申请公布号 JP2002246349(A) 申请公布日期 2002.08.30
申请号 JP20010035326 申请日期 2001.02.13
申请人 MEMC JAPAN LTD 发明人 SHIMIZU KATSUNORI;AOYAMA YUKI
分类号 B08B1/04;B08B3/08;B08B3/12;H01L21/304;(IPC1-7):H01L21/304 主分类号 B08B1/04
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