| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of adjusting focal point, by which the focal point of a beam including a beam having an arbitrary shape can be adjusted with high accuracy, and to provide an electron beam lithography system which can write a pattern with high accuracy. SOLUTION: The lens value of an objective lens 8 is set in a plurality of stages, by using an objective lens driving circuit 21 or a dynamic focal point corrector 22, and the focal point of the lens 8 is adjusted to the lens value at which positional deviationδr of a mark on the surface 28 of a sample becomes minimal, by scanning the deviation of the axis of the lens 8 using a deflection control circuit 14, while the angleθof incidence on the lens 8 is changed under different conditions and measuring the positional deviationδr by means of mark position detecting mechanisms 16 and 18.
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