发明名称 |
CVD METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a CVD method suitable for mass production of oxide films which have superior characteristics and are used mainly for gates. SOLUTION: The CVD method includes a first step of forming a film on a substrate and a second step of stopping the introduction of a material gas and only the excited active species are irradiated to the thin film formed at the first step to facilitate oxidizing reaction.
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申请公布号 |
JP2002246381(A) |
申请公布日期 |
2002.08.30 |
申请号 |
JP20010038631 |
申请日期 |
2001.02.15 |
申请人 |
ANELVA CORP;NEC CORP |
发明人 |
KOU SHIYOUDAI;YUDA KATSUHISA |
分类号 |
G02F1/1368;C23C16/00;C23C16/40;C23C16/44;C23C16/452;C23C16/455;C23C16/56;H01L21/31;H01L21/316;(IPC1-7):H01L21/31;G02F1/136 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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