| 摘要 |
<p>PROBLEM TO BE SOLVED: To allow a self-control circuit using dummy memory circuit to have operation margin without varying characteristics of a dummy memory cell and a dummy bit line. SOLUTION: In a semiconductor memory having a dummy memory circuit simulating read-out from a memory cell, it is characterized by that immediately before read-out is performed by a sense amplifier, a fixed potential corresponding to data being inverse to data previously given by a dummy memory cell is generated between dummy bit lines.</p> |
