发明名称 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR OPERATION DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide an MFMISFET semiconductor device and a semiconductor operation device, which have sufficient functions as a memory element, enable execution of accurate difference (absolute) operation without causing change of polarization vector and are driven a with small power consumption. SOLUTION: In the MFMISFET, a switch 10 for turning connection between a control gate 8 and a signal line 9 'on/off' is disposed in the control gate 8. The control gate 8 becomes electrically floating, by turning the switch 10 'off', keeping the control gate 8 provided with a prescribed potential, and it is not thereafter affected by a voltage applied to the control gate 6 and the polarized state of a charge storage film 7 does not change.</p>
申请公布号 JP2002246487(A) 申请公布日期 2002.08.30
申请号 JP20010040489 申请日期 2001.02.16
申请人 SHIBATA SUNAO;I & F KK 发明人 KOBAYASHI DAISUKE;SHIBATA SUNAO
分类号 G11C16/04;G11C11/22;G11C16/02;H01L21/8246;H01L21/8247;H01L27/105;H01L29/788;H01L29/792;(IPC1-7):H01L21/824 主分类号 G11C16/04
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