摘要 |
<p>PROBLEM TO BE SOLVED: To provide an MFMISFET semiconductor device and a semiconductor operation device, which have sufficient functions as a memory element, enable execution of accurate difference (absolute) operation without causing change of polarization vector and are driven a with small power consumption. SOLUTION: In the MFMISFET, a switch 10 for turning connection between a control gate 8 and a signal line 9 'on/off' is disposed in the control gate 8. The control gate 8 becomes electrically floating, by turning the switch 10 'off', keeping the control gate 8 provided with a prescribed potential, and it is not thereafter affected by a voltage applied to the control gate 6 and the polarized state of a charge storage film 7 does not change.</p> |