| 摘要 |
PROBLEM TO BE SOLVED: To provide a wiring structure, by which the long-life wiring exhibiting a higher EM resistance than the conventional wiring can be formed, even when the distance between via holes is 50μm or larger. SOLUTION: The wiring structure 10 is provided with an interlayer insulating film 12, a first wiring layer 14, to which a low potential is applied and a second wiring layer 16 to which a high potential is applied, when the wiring structure 10 is used on the top of and under the interlayer insulating film 12 and a via hole 18, which is formed in the interlayer insulating film 12 and electrically connects the first wiring 14 and the second wiring 16. The first wiring layer 14 and the second wiring layer 16 respectively have overlapped region 14a and 16a including contact areas 14x and 16x with the via hole 18. The shortest distance d1 from the via hole contact area edge to the wiring end 14e in the overlapped region 14a of the first wiring layer 14 is longer than the shortest distance d2 from the via hole contact area edge to the wiring end 16e in the overlapping are 16a of the second wiring layer 16 and is 50μm or smaller and the wiring resistance of the first wiring layer 14 is set higher that the wiring resistance of the second wiring layer 16. |
