发明名称 FET BAND AMPLIFIER
摘要 An FET band amplifier for providing a high gain. An FET band amplifier (5) included in an AM receiver comprises amplifiers (11-15) e.g. at five stages and a BPF (16) inserted halfway in their connection. Each of the amplifiers (11-15) acts as a differential amplifier comprising a p-channel FET as an amplification element. The BPF (16) allows the passage of a component of a band wider than the amplification band of the whole of the FET band amplifier and reduces a 1/f noise by removing the low-band component of a signal amplified by the amplifiers (11-13) at three stages and thermal noise by removing the high-band component. Thus, each of the amplifiers (14, 15) connected to the rear stage of the BPF (16) is not saturated by a noise component.
申请公布号 WO02067414(A1) 申请公布日期 2002.08.29
申请号 WO2002JP01539 申请日期 2002.02.21
申请人 NIIGATA SEIMITSU CO., LTD.;MIYAGI, HIROSHI 发明人 MIYAGI, HIROSHI
分类号 H03F3/16;H03F3/193;H03F3/195;H03F3/45;(IPC1-7):H03F3/195 主分类号 H03F3/16
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