SEMICONDUCTOR STORAGE DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT

摘要

A semiconductor storage device capable of high-density mounting. Element isolating regions (diagonal line sections) (16) laterally extending by meandering are formed longitudinally in parallel on the surface of a semiconductor substrate, and an active region is defined between adjacent element isolating regions (16). Each folding point of meandering (corresponding to contacts (14) or (15)) in each of the active regions has an impurity diffused region (a source or drain). Word lines (11) extending vertically in straight lines pass over the channel region in each active region via films each having a memory function. A first bit line (12) extending laterally in a straight line passes over an impurity diffused region (corresponding to a contact (14)) provided on a crest-side folding point. A second bit line (15) extending laterally in a straight line passes over an impurity diffused region (corresponding to a contact (15)) provided on a trough- side folding point.