| 摘要 |
PROBLEM TO BE SOLVED: To obtain a resin for photoresist capable of giving a fine pattern having high resolution excellent in homogeneity. SOLUTION: In the resin for photoresist there is used a compound represented by general formulas (1a) and (1b) (wherein, R1 is a hydrogen atom or a methyl group; Ra and Rb are each a 1-8C hydrocarbon group which may be the same or different; Rc, Rd and Re are each a hydrogen atom or a methyl group which may be the same or different; Xa, Xb and Xc are each -CH2- or -CO-O- which may be the same or different, provided at least one of Xa, Xb and Xc is -CO-O-) as a monomer. |
