Method of forming the capacitor with HSG in DRAM

摘要

The present invention discloses the method of forming the bottom electrode with HSG (hemispherical grain) layer on substrate, said substrate comprising a word line and an active region, said method comprising the steps of: depositing a confomal etch stop layer on said active region and said word line; forming a dielectric layer on said etch stop layer with planar top surface; forming a contact hole in said. dielectric layer and said etch stop layer to expose portions of said active region and said word line; depositing a first conductive layer on the surface of the contact hole; forming a hemishperical grain (HSG) layer on said first conductive layer; and removing said dielectric layer.