GAAS SINGLE CRYSTAL SUBSTRATE AND EPITAXIAL WAFER USING THE SAME

摘要

A GaAs single crystal substrate and an epitaxial wafer using the same which suppress generation of slips when the epitaxial layer is grown and enable improvement of withstanding characteristic of devices can be obtained. A GaAs single crystal substrate has mean dislocation density in plane of at most 2 x 10 4 cm-2, carbon concentration of 2.5 to 20.0 x 10 15 cm- 3, boron concentration of 2.0 to 20.0 X 10 16 cm-3, impurity concentration othe r than carbon and boron of at most 1 X 10 17 cm-3, EL2 concentration of 5.0 to 10.0 X 10 15cm-3, resistivity of 1.0 to 5.0 X 10 8 .OMEGA. cm and mean residual strain measured by photoelastic analysis of at most 1.0 X 10-5.