| 摘要 |
PURPOSE: A crystallization equipment for amorphous silicon is provided to crystallize the amorphous film by heat treatment using the UV light while forming metal by plasma and applying electric fields. CONSTITUTION: In a crystallization equipment for amorphous silicon, an insulating substrate(1), an amorphous film(5) deposited on the substrate, and plasma formed on the amorphous film by applying RF to a moving metal rod under non-reactive gas atmosphere. The amorphous film is uniformly applied with metal by scanning the moving rod from a side to the other side of the substrate and heated by UV while electric fields are applied to the amorphous film, then a thin silicon film on the substrate absorbs the UV, incurring metal induction crystallization.
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