| 摘要 |
In the fabrication of a semiconductor structure, a silicon substrate is provided, and an insulating layer is provided on the substrate. First and second structures are provided on the insulating layer, the first structure comprising a dielectric on the insulating layer, and the second structure comprising polysilicon on the insulating layer and a dielectric on the polysilicon. Source and drain regions are formed in the silicon using the first and second structures as masks.The dielectric of the first structure is removed, the dielectric of the second structure is removed to expose the polysilicon, and a portion of the insulating layer is removed to expose portions of the silicon of the substrate. Silicide is then grown on exposed portions of silicon and the polysilicon. The present semiconductor structure includes a silicon substrate, a first transistor having a source and a drain the substrate and a Schottky gate, and a second transistor having a source and a drain in the substrate, a gate insulator on the substrate, and a gate on the gate insulator.
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