发明名称 Field correction of overlay error
摘要 Methods of correcting for overlay error, wherein the methods account for relative offset across the field of exposures of more than one photolithography projection system, as well as systems to perform the methods and apparatus produced therefrom. The methods include defining at least two zones within a field of a mask having substantially similar overlay error values. The methods further include modifying the coordinates of a feature of the mask in response to a correction for the zone to which the feature is mapped, where the correction corresponds to a nominal overlay error value for that zone.
申请公布号 US6440612(B1) 申请公布日期 2002.08.27
申请号 US19990388055 申请日期 1999.09.01
申请人 MICRON TECHNOLOGY, INC. 发明人 BAGGENSTOSS BILL
分类号 G03F1/14;G03F7/20;(IPC1-7):G03F9/00 主分类号 G03F1/14
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