| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-speed SRAM and whose power consumption can be lowered. SOLUTION: The memory cell of the SRAM has a structure, in which five conductive layers are provided in the upper part of a field. Subword lines 23a, 23b in the first-layer conductive layer are situated, so as to be separated from an active region 13 as the field viewed from a plane. The active region 13 does not extend to the lower part of the subword lines 23a, 23b. Since the overlapping part of the active region 13 with the subword line 23a (or 23b) is not generated, stray capacitance caused by the overlap part can be eliminated. |
