| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing an SRAM whose memory size can be miniaturized. SOLUTION: The method of manufacturing a semiconductor device is provided with a process, in which gate-to-gate electrode layers 111a, 111b comprising the gate electrode of a load transistor and the gate electrode of a drive transistor are formed, a process which forms a field second-layer contact conductive part 203 connected to the drain of the load transistor and the drain of the drive transistor and embedded in an interlayer insulating film, a process in which drain-to-drain connection layers 121a, 121b used to connect the drain of the load transistor and the drain of the drive transistor are formed by a damascene operation and a process, which forms drain-to-gate connection layers 131a, 131b used to connect the layers 121a, 121b to the layers 111a, 111b. |
