| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having low power consumption and high drive capability that can operate at a low voltage. SOLUTION: For a conductive type of a gate electrode of a CMOS, both an NMOS and a PMOS are made into a P-type polycide structure, with a layer structure consisting of a P-type monopolar of polysilicon or P-type polysilicon and a metal silicide with a high-melting point. The PMOS can be made a short channel and a low threshold voltage due to a surface channel type, and also for the NMOS of an embedded channel type made into an extremely shortly embedded channel and the short channel and the low threshold voltage can be made easily, because arsenic with a small diffusion number can be used as an impurity for controlling the threshold. A resistor used for a partial voltage circuit and a CR circuit and a fuse for laser trimming are made identical with the polysilicon layer as the gate electrode.
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