| 摘要 |
A semi-physical device model that can represent known physical device characteristics as well as measured noise characteristics accurately. The semi-physical device model utilizes analytical expressions to model the fundamental charge of the electric field structure of a HEMT's internal structure. The expressions are based on device physics but are empirical in form. As such, the model is able to maintain physical dependencies with good fidelity while retaining relatively accurate measured-to-model noise characteristics. The semi-physical model also provides model elements for a FET noise equivalent circuit model. In particular, the noise generator model elements are derived from a current/voltage perturbation analysis of the intrinsic charge and electric fields as modeled within the device by the semi-physical HEMT model. The simulated noise model elements represent a relatively accurate physical equipment description of the physical FET. Since the model elements are derived from an intrinsic charge model, the RF performance can be predicted at an arbitrary bias point.
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