发明名称 |
Semiconductor device bonding pad resistant to stress and method of fabricating the same |
摘要 |
According to various embodiments of the present invention, a bonding pad structure of a semiconductor device reduces damage caused by thermo-mechanical stress in beam lead bonding. A method of fabricating an improved bonding pad structure is also provided. A polysilicon film plate is preferably formed between a bonding pad metal layer and a dielectric layer. The polysilicon film plate absorbs external thermo-mechanical stress and improves the durability of the bonding pad in a bond pull test (BPT). The bonding between the bonding pad metal layer and the dielectric layer is also improved. Other features and advantages are also provided.
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申请公布号 |
US2002113313(A1) |
申请公布日期 |
2002.08.22 |
申请号 |
US20020068628 |
申请日期 |
2002.02.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM SHIN;CHUNG TAE-GYEONG;KIM NAM-SEOG;LEE WOO-DONG;LEE JIN-HYUK |
分类号 |
H01L23/52;H01L21/3205;H01L21/60;H01L23/31;H01L23/485;H01L25/065;(IPC1-7):H01L29/40 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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