METHOD FOR FABRICATING CONTACT OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a contact of a semiconductor device is provided to guarantee a contact margin and to prevent a short-circuit phenomenon between landing plugs, by depositing a material of a low dielectric constant as a word line passivation layer before an oxide layer is deposited so that the word line is prevented from being damaged in a self-aligned contact etch process for forming the contact. CONSTITUTION: After the word line(110) is formed on a semiconductor substrate(100), a mask nitride layer, the word line passivation layer and the oxide layer are sequentially deposited. A photoresist layer for forming the contact is applied. A self-aligned contact etch process is performed to form the contact by using the photoresist layer as a mask. After the photoresist layer is eliminated, the mask nitride layer is etched to form a word line spacer. A polysilicon layer is deposited on the resultant structure. Even the surface of the word line is planarized by performing a chemical mechanical polishing(CMP) process.