| 摘要 |
The present invention provides a method for stabilizing low dielectric constant materials in a semiconductor structure. The method comprises providing the semiconductor device and thereon spinning-on a dielectric layer. After curing step, the dielectric layer is treated with an aqueous solution, for example, containing ammonium hydroxide. With the aqueous solution, a passivated film formed on the suface of the dielectric layer, such as a polymer layer, can protect the dielectric layer from adsorption of moisture or solvents.
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