发明名称 |
Process for lacquering photomask blank, used for chip manufacture, involves neutralizing chromium oxide-coated mask with dilute acid in deionized water, cleaning and applying chemically amplified resist |
摘要 |
Process for lacquering a photomask blank for chip manufacture comprises: (a) preparing a mask blank coated with a chromium oxide CrOx; (b) treatment with a dilute acid aqueous solution to neutralize basic impurities on the blank; (c) cleaning the blank; and (d) applying a chemically amplified resist. An independent claim is also included for photomasks for chip manufacture made from a CrOx-coated substrate, coated with a chemically amplified resist as above. |
申请公布号 |
DE10104577(A1) |
申请公布日期 |
2002.08.22 |
申请号 |
DE2001104577 |
申请日期 |
2001.02.01 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
TSCHINKL, MARTIN |
分类号 |
G03F1/50;G03F1/68;G03F1/82;G03F7/16 |
主分类号 |
G03F1/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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