发明名称 Process for lacquering photomask blank, used for chip manufacture, involves neutralizing chromium oxide-coated mask with dilute acid in deionized water, cleaning and applying chemically amplified resist
摘要 Process for lacquering a photomask blank for chip manufacture comprises: (a) preparing a mask blank coated with a chromium oxide CrOx; (b) treatment with a dilute acid aqueous solution to neutralize basic impurities on the blank; (c) cleaning the blank; and (d) applying a chemically amplified resist. An independent claim is also included for photomasks for chip manufacture made from a CrOx-coated substrate, coated with a chemically amplified resist as above.
申请公布号 DE10104577(A1) 申请公布日期 2002.08.22
申请号 DE2001104577 申请日期 2001.02.01
申请人 INFINEON TECHNOLOGIES AG 发明人 TSCHINKL, MARTIN
分类号 G03F1/50;G03F1/68;G03F1/82;G03F7/16 主分类号 G03F1/50
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