发明名称 |
Liquid phase growth method of silicon crystal, method of producing solar, cell, and liquid phase growth apparatus |
摘要 |
Provided are a liquid phase growth method of silicon crystal comprising a step of injecting a source gas containing at least silicon atoms into a solvent to decompose the source gas and, simultaneously therewith, dissolving the silicon atoms into the solvent, thereby supplying the silicon atoms into the solvent, and a step of dipping or contacting a substrate into or with the solvent, thereby growing a silicon crystal on the substrate; and a method of producing a solar cell utilizing the aforementioned method. Also provided is a liquid phase growth apparatus of a silicon crystal comprising means for holding a solvent in which silicon atoms are dissolved, and means for dipping or contacting a substrate into or with the solvent, the apparatus further comprising means for injecting a source gas containing at least silicon atoms into the solvent. These provide a liquid phase growth method of a silicon crystal and a production method of a solar cell each having high volume productivity and permitting continuous growth.
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申请公布号 |
US2002112660(A1) |
申请公布日期 |
2002.08.22 |
申请号 |
US20020120357 |
申请日期 |
2002.04.12 |
申请人 |
NISHIDA SHOJI;NAKAGAWA KATSUMI;UKIYO NORITAKA;IWANE MASAAKI |
发明人 |
NISHIDA SHOJI;NAKAGAWA KATSUMI;UKIYO NORITAKA;IWANE MASAAKI |
分类号 |
C30B19/02;C30B19/06;(IPC1-7):C30B19/00 |
主分类号 |
C30B19/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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