发明名称 Liquid phase growth method of silicon crystal, method of producing solar, cell, and liquid phase growth apparatus
摘要 Provided are a liquid phase growth method of silicon crystal comprising a step of injecting a source gas containing at least silicon atoms into a solvent to decompose the source gas and, simultaneously therewith, dissolving the silicon atoms into the solvent, thereby supplying the silicon atoms into the solvent, and a step of dipping or contacting a substrate into or with the solvent, thereby growing a silicon crystal on the substrate; and a method of producing a solar cell utilizing the aforementioned method. Also provided is a liquid phase growth apparatus of a silicon crystal comprising means for holding a solvent in which silicon atoms are dissolved, and means for dipping or contacting a substrate into or with the solvent, the apparatus further comprising means for injecting a source gas containing at least silicon atoms into the solvent. These provide a liquid phase growth method of a silicon crystal and a production method of a solar cell each having high volume productivity and permitting continuous growth.
申请公布号 US2002112660(A1) 申请公布日期 2002.08.22
申请号 US20020120357 申请日期 2002.04.12
申请人 NISHIDA SHOJI;NAKAGAWA KATSUMI;UKIYO NORITAKA;IWANE MASAAKI 发明人 NISHIDA SHOJI;NAKAGAWA KATSUMI;UKIYO NORITAKA;IWANE MASAAKI
分类号 C30B19/02;C30B19/06;(IPC1-7):C30B19/00 主分类号 C30B19/02
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