发明名称 |
Method of fabricating semiconductor device |
摘要 |
After phosphorus is ion implanted into a portion of a polysilicon film, first RTA is performed. After boron is ion implanted into another portion of the polysilicon film, the polysilicon film is patterned to form a gate electrode and a resistor film. A TEOS film is deposited and patterned to form a silicidation mask having an opening corresponding to a silicidation region. Thereafter, annealing for activating boron is performed in an atmosphere containing oxygen, thereby forming oxide films on a gate electrode and on heavily doped source/drain regions in the silicidation region. The oxide films suppress out-diffusion of the impurities and inhibit the impurity ions from penetrating the gate electrode 8 during ion implantation for promoting silicidation, which is performed subsequently.
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申请公布号 |
US6436747(B1) |
申请公布日期 |
2002.08.20 |
申请号 |
US20000551541 |
申请日期 |
2000.04.18 |
申请人 |
MATSUSHITA ELECTTRIC INDUSTRIAL CO., LTD. |
发明人 |
SEGAWA MIZUKI;MATSUMOTO MICHIKAZU;YASUMI MASAHIRO |
分类号 |
H01L21/265;H01L21/324;H01L21/336;H01L21/8238;H01L29/49;(IPC1-7):H01L21/336;H01L21/823 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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