| 摘要 |
In a method of producing a semiconductor device, an a-Si film is crystallized using nickel to form a CGS film. Then, an a-Si film containing phosphorus is directly formed on the whole surface of the CGS film, and then the CGS film and the a-Si film are subjected to heat treatment to thereby getter the nickel from the CGS film the a-Si film. The a-Si film containing nickel and phosphorus is removed. Then, using the thus obtained CGS film for an active region, a thin-film transistor is formed.
|
