发明名称 Process device
摘要 A process device and a method for processing a substrate. A dipole ring magnet (DRM) is arranged in a manner so that a leakage magnetic field in the neighborhood of the process device and at a position a prescribed distance therefrom is minimized. The dipole ring magnet (DRM) rotates around an outer periphery of a process chamber which has a plasma generation device, a substantially cylindrical shield plate covering an outer periphery of the dipole ring magnet. The shield is rotated coaxially with the dipole ring magnet and in a direction opposite to the rotation of the dipole ring magnet. In this way a magnetic field is generated in a direction that cancels leakage magnetic flux generated outside the dipole ring magnet.
申请公布号 US6436230(B1) 申请公布日期 2002.08.20
申请号 US20000717279 申请日期 2000.11.22
申请人 TOKYO ELECTRON LIMITED 发明人 KONDO TOMOMI;KIMURA HIDETOSHI
分类号 H01L21/302;B01J19/08;C23C14/35;C23C16/52;H01J37/32;H01L21/205;H01L21/3065;(IPC1-7):H05H1/00;C23C16/00;H01L21/00;H01J1/00 主分类号 H01L21/302
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