| 摘要 |
A field programmable gate array (FPGA) includes a first non-volatile memory cell and a second non-volatile memory cell. Each of the two non-volatile memory cells is capable of storing at least one bit of information. The second non-volatile memory cell provides redundant storage of the information stored in the first non-volatile memory cell. A read circuit is coupled to the first non-volatile memory cell and the second non-volatile memory cell. The read circuit simultaneously reads the information stored in the first and second non-volatile memory cells, The read circuit reads the information stored in the first non-volatile memory cell even if the second non-volatile memory cell is defective or is not programmed properly. The FPGA may include a third non-volatile memory cell coupled to the read circuit, which provides redundant storage of the information stored in the first non-volatile memory cell. Each non-volatile memory cell includes a storage transistor having a source and a drain, both of which are coupled to ground. Additionally, each storage transistor has a gate oxide. Each non-volatile memory cell is programmed by breaking the gate oxide of the storage transistor.
|
