发明名称 |
Method for achieving copper fill of high aspect ratio interconnect features |
摘要 |
One aspect of the invention provides a consistent metal electroplating technique to form void-less metal interconnects in sub-micron high aspect ratio features on semiconductor substrates. One embodiment of the invention provides a method for filling sub-micron features on a substrate, comprising reactive precleaning the substrate, depositing a barrier layer on the substrate using high density plasma physical vapor deposition; depositing a seed layer over the barrier layer using high density plasma physical vapor deposition; and electro-chemically depositing a metal using a highly resistive electrolyte and applying a first current density during a first deposition period followed by a second current density during a second period.
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申请公布号 |
US6436267(B1) |
申请公布日期 |
2002.08.20 |
申请号 |
US20000650108 |
申请日期 |
2000.08.29 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
CARL DANIEL A.;CHIN BARRY;CHEN LIANG;CHEUNG ROBIN;DING PEIJUN;DORDI YEZDI;HASHIM IMRAN;HEY PETER;SINHA ASHOK K. |
分类号 |
H01L21/288;H01L21/768;(IPC1-7):C23C28/02;C25D5/02;C25D11/32 |
主分类号 |
H01L21/288 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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