发明名称 |
Systems and methods for epitaxial processing of a semiconductor substrate |
摘要 |
A thermal processing system and method for processing a semiconductor substrate. An inductor couples energy to a susceptor, wherein the spacing between the inductor and the susceptor is configured for the steady-state portions of a CVD epitaxial deposition process. The temperature uniformity of the susceptor is improved during the transient portions of the process, the heat ramp-up and cool down, by varying the distance of separation between the inductor and the susceptor. Temperature non-uniformities are a common cause of slip. Additional aspects of the invention provide for improved thermal shielding of the edges and top surface of the susceptor. Thicker susceptors also improve temperature uniformity.
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申请公布号 |
US6436796(B1) |
申请公布日期 |
2002.08.20 |
申请号 |
US20000495402 |
申请日期 |
2000.01.31 |
申请人 |
MATTSON TECHNOLOGY, INC. |
发明人 |
MAILHO ROBERT D.;O'HARA MARK J.;PFEFFERKORN GLENN A.;EVANS GARY LEE;JOHNSGARD KRISTIAN E. |
分类号 |
C30B25/12;C23C16/46;C30B25/10;H01L21/00;H01L21/205;(IPC1-7):H01L21/20 |
主分类号 |
C30B25/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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