| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor element with high reliability. SOLUTION: While a material containing at least one metal element from among nickel, iron, cobalt, and platinum is brought into contact with the top surface of an amorphous silicon film 12, a heat treatment is carried out for crystallization and then the crystallized silicon film has an impurity region, doped with phosphorus, selectively formed and thermally treated. The heat- treated impurity region has a concentration of >=1×1017 cm-3 of the metal element and a channel formation area has a concentration of <1×1020 cm-3 of the metal element. |
