| 摘要 |
In a semiconductor integrated circuit, the wiring capacitance of the bus line region is reduced, so that the operation speed can be increased, the power consumption can be decreased, and the chip size can be reduced. On the upper surface of the field oxide film (4) formed on the semiconductor substrate (8), a non-conductive insulating oxide film (12) is formed by oxidizing the poly silicon layer (9). Further, the bus lines (3A) are formed on the oxide film (12) via the interlayer insulating film (6). Therefore, a distance between the bus lines (3A) and the substrate (8) can be increased to decrease the capacitance of the bus lines (3A). |
