| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor energy detector that can quickly transfer charges, and inhibits generation of blooming due to excessive charges. SOLUTION: In the back irradiated semiconductor energy detector having a thin section where the back side of a substrate is thinned, auxiliary wirings 21 to 23 are provided at the upper section of a group of vertical transfer electrodes provided at the surface side of a light reception section 1a where a plurality of vertical transfer channels 6 and an overflow drain 12 are formed. The auxiliary wirings 21 to 23 supply a transfer voltage to the transfer electrode for reducing the resistance of the transfer electrode. At the same time, wiring 30 connected to the overflow drain 12 for discharging the excessive charge from the overflow drain 12 is formed with a wiring pattern along the auxiliary wirings 21 to 23.
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