| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device with shorter routing lengths and a thinner sealing thickness by configuring a loop height being within the dimension range of side surface thickness by reverse wire-bonding between stacked semiconductor chips wherein two chips are stepwise stacked and a lead frame with metal wires. SOLUTION: In the semiconductor chips having main surfaces on which pads are arranged and backsides, the main surface and a backside surface of semiconductor chips are stepwise secured so that pads of each chip do not overlapped and the backside of the semiconductor chips is secured on one side of a die pad of the lead frame whose die pad is recessed. Pads of the stacked semiconductor chips and inner leads corresponding to the pads are reverse wire-bonded with metal wires, main five surfaces of the inner leads, the stacked semiconductor chips, metal wires, junction materials and the die pad are covered with a encapsulation resin and another surface of the die pad is exposed out of the outer surface of the encapsulation resin. |
